Room-temperature Valleytronic Transistors Could be the Next Thing After CMOS

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Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal–oxide–semiconductor (CMOS) technology. Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature, demonstrations of valleytronic building blocks similar to transistors…

Room-temperature Valleytronic Transistors Could be the Next Thing After CMOS
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Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal–oxide–semiconductor (CMOS) technology. Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature, demonstrations of valleytronic building blocks similar to transistors in electronics, especially at room temperature, remain elusive. Here, we report a solid-state device that enables a full sequence of generating, propagating, detecting and manipulating valley information at room temperature. Chiral nanocrescent plasmonic antennae8 are used to selectively generate valley-polarized carriers in MoS2 through hot-electron
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